| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that overcomes the problem of the peeling of a through electrode and the problem of the peeling of a back wiring at the same time, by independently controlling the film thickness of the through electrode and the film thickness of the back electrode, in the semiconductor device having the through electrode and the back electrode formed integrally with the same, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a semiconductor substrate 10, a wiring layer 13 formed at the upper part of the semiconductor substrate and comprising at least one layer, a through electrode 30 reaching a wiring from the backside of the semiconductor substrate, a back wiring 40 provided on the backside of the semiconductor substrate and connected with the through electrode, and an external terminal 50 connected with the back wiring. The back wiring has the film thickness of a portion including at least connections with the external terminal formed thicker than the film thickness of the through electrode. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
