PHASE SHIFT PHOTO MASK BLANKS, PHASE SHIFT PHOTO MASK, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a phase shift photo mask which has sufficient transmittance of wavelength to be used even for a short exposure light wavelength, has proper transmittance of wavelength for defect inspections to successfully achieve the inspections, to provide a phase shift photo mask blanks for fabricating the mask, and to provide a method for fabricating a semiconductor device using the mask.

SOLUTION: In an attenuated type phase shift film consisting of two layers, a film refractive index and an extinction coefficient of an upper layer are made lower than those of a lower layer to increase transmittance at an exposure light wavelength. In an attenuated type phase shift film consisting of three layers, a film refractive index and an extinction coefficient of an intermediate layer are made lower than those of an upper layer and a lower layer to reduce transmittance at the defect examination wavelength. In an attenuated type phase shift film consisting of three or more layers, a film refractive index and an extinction coefficient of the uppermost layer are made lower than a film refractive index of a layer just under the uppermost layer to increase transmittance at the exposure light wavelength.

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