| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory having high operation reliability. <P>SOLUTION: The nonvolatile semiconductor memory is provided with a memory cell array and a control circuit. A laminate obtained by alternately laminating a plurality of insulating films and a plurality of electrode films is provided in the memory cell array. A through hole extending in the laminating direction is formed in the laminate, and silicon pillars are embedded therein. Between the electrode films and the silicon pillars, a charge accumulation film is provided. A memory cell is formed at each intersection of an electrode film and a silicon pillar. The control circuit writes a value "0" in all the memory cells during formatting, deletes the value "0" from all the memory cells, reads a value stored in the memory cell formed at the top of the laminate, determines that a delete error occurs in a memory cell from which the value "0" is read, and disables the memory cell. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
