| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology that improves radiation performance of a semiconductor substrate while preventing a semiconductor module from short-circuiting. <P>SOLUTION: A semiconductor module includes: a semiconductor substrate 18 where IGBT is formed; an emitter electrode 18d that is formed on a surface 18a of the semiconductor substrate 18 and that has a GND potential; a collector electrode 18f that is formed on a second surface 18e of the semiconductor substrate 18 and has a potential larger than the GND potential; and a second heat sink 30 that is bonded with the collector electrode 18f. The second heat sink 30 has a sidewall 26 that thermally contacts with a side surface 18b of the semiconductor substrate 18. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
