FORMATION OF INTER-DEVICE STI REGIONS AND INTRA-DEVICE STI REGIONS USING DIFFERENT DIELECTRIC MATERIALS

摘要

PROBLEM TO BE SOLVED: To form inter-device STI (Shallow Trench Isolation) regions and intra-device STI regions using different dielectric materials. SOLUTION: An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip, for forming a semiconductor fin, over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value. COPYRIGHT: (C)2011,JPO&INPIT