| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus and a method of manufacturing the same capable of achieving further improvement of characteristics of a capacitor using a ferroelectric film. SOLUTION: A semiconductor apparatus has a capacitor with a lower electrode 48 formed over a semiconductor substrate 10, a capacitor dielectric film 54 having a first ferroelectric film 50 residing directly on the lower electrode and comprising lead zirconate titanate to which La is added and a second ferroelectric film 52 residing directly on the first ferroelectric film, having a film thickness smaller than that of the first ferroelectric film, and comprising lead zirconate titanate to which La, Ca and Sr are added, and an upper electrode 60 formed on the capacitor dielectric film. COPYRIGHT: (C)2011,JPO&INPIT
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