| 摘要 |
The present invention is directed to new oligothiophene derivatives and their use as a semiconductor material in electronic devices. More specifically, the present invention relates to new 3,4-dicyanooligothiophenes derivatives, processes for manufacturing thereof, and to their use as organic n-type (electron-transporting) semiconductors, in particular, in field-effect transistors (FET). |
| 申请人 |
UNIVERSITE LIBRE DE BRUXELLES;UNIVERSITE DE MONS;BALANDIER, JEAN-YVES;QUIST, FLORENCE;AMATO, CLAIRE;SERGUEEV, SERGUEI;GEERTS, YVES;CORNIL, JEROME;BOUZAKRAOUI, SAID |
发明人 |
BALANDIER, JEAN-YVES;QUIST, FLORENCE;AMATO, CLAIRE;SERGUEEV, SERGUEI;GEERTS, YVES;CORNIL, JEROME;BOUZAKRAOUI, SAID |
