| 摘要 |
<p>The present invention relates to an electrostatic discharge protection circuit of a semiconductor memory device to protect an internal circuit from static electricity. The electrostatic discharge protection circuit includes a first trigger unit which provides a first trigger voltage in response to static electricity transferred from at least one of a first and second voltage line. A second trigger unit provides a second trigger voltage by the static electricity in response to the first trigger voltage. An electrostatic discharge protection unit configures an electrostatic discharge path among the first voltage line, the second voltage line and an input/output pad in response the first and second trigger voltages. The electrostatic discharge speed of the electrostatic discharge protection unit is enhanced by the first and second trigger voltages.</p> |
