| 摘要 |
1,069,041. Capacitors. TELEGRAPH CONDENSER CO. Ltd. Sept. 10, 1963 [Sept. 25, 1962], No. 35648/63. Heading H1M. A body 10 of single or polycrystalline semiconductor quality silicon is coated with silicon dioxide 11 by thermal or electrolytic oxidation or a combination thereof, or by deposition from pyrolysis of an organo-silane, e.g. dimethyl or diphenyl diethoxy silane; amyl, vinyl, phenyl, ethyl triethoxysilane; tetraethoxysilane; or by sputtering silica on the surface, or by depositing silicon monoxide and oxidizing to silica. The silicon may be first etched (Fig. 4, not shown) in a mixture of hydrofluoric, nitric and acetic acids, or a gaseous mixture of hydrogen bromide, or chlorine, with argon. Electrodes 12 of, e.g., silver, are applied to the silicon dioxide layer by painting or spraying followed by firing; by vapour deposition; or by surface decomposition of carbonyls; metal tabs 13, 14 being attached to the electrode layers. The silicon dioxide layer is removed from the edge by e.g. abrading and electrode 18 deposited on the exposed silicon surface is connected to tab 19 to provide a double capacitor with one electrode in common. Plural capacitors may be stacked with appropriate electrodes interconnected. Reference has been directed by the Comptroller to Specification 945,737. |
