| 摘要 |
PURPOSE: A local self-boosting method of a flash memory device and a program method using the same are provided to perform local self boosting without low bias voltages. CONSTITUTION: In a local self-boosting method of a flash memory device and a program method using the same, a word line(WL0~WL15) is driven by a first pass voltage through a decoder circuit. A global potential well(201) is formed in a string channel. The word line(WL8, WL9, WL4, WL5) is driven by a second pass voltage through a row decoder circuit. Potential barriers(202,203) are formed in a channel in the lower part of the word lines A potential well(204) is formed by the potential barriers which form the local channels. |
