发明名称 LOW NOISE AMPLIFIER USING COMMON GATE AMPLIFER STURCTURE
摘要 PURPOSE: A low noise amplifier using a common gate amplifier structure is provided to reduce a noise index of a low amplifier by forming first and second amplifiers in a common gate amplifier. CONSTITUTION: A first amplifier(200) amplifies an inputted RF signal at first, and a second amplifier(202) is electrically connected to the first amplifier. The second amplifier secondly amplifies the RF signal amplified by the first amplifier. An output unit(206) is electrically connected to the second amplifier. The first and/or second amplifiers have common gate amplifier or common base amplifying structure.
申请公布号 KR20110048308(A) 申请公布日期 2011.05.11
申请号 KR20090105055 申请日期 2009.11.02
申请人 发明人
分类号 H03F3/34;H03F1/26 主分类号 H03F3/34
代理机构 代理人
主权项
地址