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发明名称
Trench-gate vertical MOSFET manufacturing method
摘要
申请公布号
EP1909331(B1)
申请公布日期
2011.05.11
申请号
EP20070253213
申请日期
2007.08.15
申请人
POWER INTEGRATIONS, INC.
发明人
DISNEY, DONALD RAY
分类号
H01L29/78;H01L21/311;H01L21/336;H01L29/40;H01L29/423
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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