发明名称 HIGH Q TRANSFORMER DISPOSED AT LEAST PARTLY IN A NON-SEMICONDUCTOR SUBSTRATE
摘要 An assembly involves an integrated circuit die that is bonded, e.g., flip-chip bonded, to a non-semiconductor substrate by a plurality of low-resistance microbumps. In one novel aspect, at least a part of a novel high-frequency transformer is disposed in the non-semiconductor substrate where the non-semiconductor substrate is the substrate of a ball grid array (BGA) integrated circuit package. At least one of the low-resistance microbumps connects the part of the transformer in the substrate to a circuit in the integrated circuit die. At two gigahertz, the novel transformer has a coupling coefficient k of at least at least 0.4 and also has a transformer quality factor Q of at least ten. The novel transformer structure sees use in coupling differential outputs of a mixer to a single-ended input of a driver amplifier in a transmit chain of an RF transceiver within a cellular telephone.
申请公布号 EP2319078(A1) 申请公布日期 2011.05.11
申请号 EP20090791099 申请日期 2009.08.03
申请人 QUALCOMM INCORPORATED 发明人 TANG, YIWU;JIN, ZHANG
分类号 H01L23/48;H01L23/495;H01L23/50;H01L23/522 主分类号 H01L23/48
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