| 摘要 |
<p>PURPOSE: A semiconductor device and a method for forming the same are provided to prevent the oxidation of a gate material by forming a metal layer having higher speed than a gate material. CONSTITUTION: In a semiconductor device and a method for forming the same, a semiconductor substrate(100) is etched to form recess(115). The gate material(125) is deposited in the lower part of the recess. . A capping layer is formed on the side wall of the recess which is exposed by the gate material. A metal(135) is evaporated in the recess of the gate material. A nitride film(140) is evaporated over the metal layer.</p> |
