| 摘要 |
A spin-torque transfer magnetic read access memory (STT-MRAM) that includes a magnetic bit coupled between a first conductor line (104) and a selection device (106). The selection device includes at least two transistors (202,204). The selection device is operative to (a) select the magnetic bit for a spin-torque transfer (STT) write operation when the at least two transistors are in a first state and (b) select the magnetic bit for a read operation when the at least two transistors are in a second state. The selection device may be implemented in silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology, and the transistors may include body ties. The selection device may also be radiation hardened.
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