PURPOSE: A poly silicon depositing apparatus is provided to successively supply a reaction gas according to the deposition thickness of poly silicon deposited on a silicon core rod. CONSTITUTION: A reactor(110) comprises first and second gas jetting nozzles and a gas discharging hole(112). An electrode unit includes a first electrode(121a) and a second electrode(121b) which are separated each other. A silicon core rod receives a current from the first electrode of the electrode unit and inputs the current to the second electrode of the electrode unit. A reaction gas supply unit(124) supplies a reaction gas through a reaction gas supply pipe connected to the first and second gas jetting nozzles. A valve controller(127) controls opening/closing of a valve according to the thickness of poly silicon deposited on the silicon core rod.
申请公布号
KR101033163(B1)
申请公布日期
2011.05.11
申请号
KR20100086660
申请日期
2010.09.03
申请人
SEMIMATERIALS. CO., LTD.
发明人
KANG, SEUNG OH;PARK, SUNG EUN;YOU, HO JUNG;LEE, CHANG RAE;KIM, BOK SAENG;PARK, GYU DONG;PARK, KUN