| 摘要 |
1,152,075. Magnetic storage and logic devices. CSF-COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. 12 April, 1967 [19 April, 1966], No. 16893/67. Heading H1T. A ferromagnetic memory or logic element comprises a laminated structure of alternate dielectric and bistable ferromagnetic layers, the structure having at least two holes and a leg between the holes around which leg is wound a conductor. The dielectric may be silicon oxide and the ferromagnetic alloy layers have a thickness less than 400Š. Such an arrangement makes it possible to increase the effective thickness of a storage element and hence increase the output across the output winding wound around the leg, and to increase the output voltage in logic circuits incorporating the magnetic elements. |
