| 摘要 |
Immediately after etching, the surface of a semi-conductor device containing at least one PN junction is treated with a quinonoid or cyclo-ketonic compound containing at least one grouping of the type: <FORM:1000683/C6-C7/1> or <FORM:1000683/C6-C7/2> or with a mixture of such compounds. The treatment must take place immediately after etching before an oxide film can form. During the treatment it is thought that a molecule of the compound co-ordinates with a surface semi-conductor atom originally carrying a hydroxyl group. A compound used preferably has a melting point above 100 DEG C. so that the device may be dried after it has been treated. Examples given are 1:2 - dihydroxyanthraquinone (alizarin), 1:2:7 - trihydroxyanthraquinone, 1:3-dihydroxyanthraquinone, and 1-hydroxyanthraquinone. The compound may be applied by deposition from an alcoholic solution, by applying it as a paste with a silicone oil, or by using it to fill the casing in admixture with a siccative (e.g. silica gel, boron trioxide, or calcium oxide) or a molecular sieve (e.g. sodium aluminium silicate, or calcium aluminium silicate). In the example given an alloyed or diffused junction device, which may be made of germanium, is etched, rinsed several times with distilled water, and immediately immersed in an alcohol bath containing the compound. The device is then dried for several hours (e.g. 16 hours) at a temperature below the melting point of the compound used. This may vary from around 100 DEG C. up to, in some cases. 250 DEG C. or higher. |
