发明名称 |
Method of improving intrinsic gettering ability of wafer |
摘要 |
A method of improving the intrinsic gettering ability of a wafer is described. A first annealing step is performed to the wafer at a first temperature in an atmosphere containing at least one of oxygen gas and nitrogen gas. A second annealing step is performed to the wafer, at a second temperature higher than the first temperature, in the atmosphere.
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申请公布号 |
US7939432(B2) |
申请公布日期 |
2011.05.10 |
申请号 |
US20080334829 |
申请日期 |
2008.12.15 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHIANG CHUN-LING;HSIEH JUNG-YU;YANG LING-WU |
分类号 |
H01L21/322;H01L21/335;H01L21/8232 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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