发明名称 Via first plus via last technique for IC interconnects
摘要 A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. The first set of vias are produced prior to circuitry on the die, and the second set of vias are produced after circuitry on the die. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.
申请公布号 US7939926(B2) 申请公布日期 2011.05.10
申请号 US20080334433 申请日期 2008.12.12
申请人 QUALCOMM INCORPORATED 发明人 KASKOUN KENNETH;GU SHIQUN;SWINNEN BART
分类号 H01L23/02 主分类号 H01L23/02
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