发明名称 Light emitting device having light extraction structure and method for manufacturing the same
摘要 A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
申请公布号 US7939840(B2) 申请公布日期 2011.05.10
申请号 US20090637661 申请日期 2009.12.14
申请人 LG INNOTEK CO., LTD.;LG ELECTRONICS INC. 发明人 CHO HYUN KYONG;KIM SUN KYUNG;JANG JUN HO
分类号 H01L27/15;H01L29/06;H01L29/22;H01L29/26;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L31/12;H01L33/00;H01L33/22;H01L33/32 主分类号 H01L27/15
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