发明名称 |
Method of forming a low resistance semiconductor contact and structure therefor |
摘要 |
In one embodiment, silicide layers are formed on two oppositely doped adjacent semiconductor regions. A conductor material is formed electrically contacting both of the two silicides.
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申请公布号 |
US7939897(B2) |
申请公布日期 |
2011.05.10 |
申请号 |
US20100766601 |
申请日期 |
2010.04.23 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
GRIVNA GORDON M.;VENKATRAMAN PRASAD |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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