发明名称 Interposer and electronic device fabrication method
摘要 An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
申请公布号 US7937830(B2) 申请公布日期 2011.05.10
申请号 US20080213321 申请日期 2008.06.18
申请人 FUJITSU LIMITED 发明人 SHIOGA TAKESHI;ISHIZUKI YOSHIKATSU;BANIECKI JOHN DAVID;KURIHARA KAZUAKI
分类号 H05K3/30;B29C65/00 主分类号 H05K3/30
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