发明名称 |
Semiconductor apparatus comprising bipolar transistors and metal oxide semiconductor transistors and manufacturing method |
摘要 |
A method for manufacturing a semiconductor apparatus is disclosed. The apparatus comprises double poly bipolar transistors and double poly metal oxide semiconductor (MOS) transistors. The bipolar transistors and the MOS transistors are manufactured in a unified process in which a first polysilicon layer (Poly1) is doped to form the extrinsic bases in the bipolar transistors and to form the gates in the MOS transistors. A second polysilicon layer (Poly2) is doped to form emitters in the bipolar transistors and to form the sources and drains in the MOS transistors. The method of the invention minimizes the number of manufacturing process steps.
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申请公布号 |
US7939402(B1) |
申请公布日期 |
2011.05.10 |
申请号 |
US20090653706 |
申请日期 |
2009.12.17 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
FOOTE RICHARD W.;OLIVER ROBERT |
分类号 |
H01L29/96 |
主分类号 |
H01L29/96 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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