发明名称 |
Semiconductor device and method for producing a semiconductor device |
摘要 |
A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
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申请公布号 |
US7939850(B2) |
申请公布日期 |
2011.05.10 |
申请号 |
US20090403100 |
申请日期 |
2009.03.12 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
MAUDER ANTON;ALOISE GIULLIANO |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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