| 摘要 |
<p>PURPOSE: A method for forming a photoresist pattern is provided to improve the thickness uniformity of the final photoresist pattern by using an exposure mask which partially transmits light on a region corresponding the photoresist pattern. CONSTITUTION: The final photoresist pattern includes a first photoresist pattern(21) and a second photoresist pattern. The second photoresist pattern crosses the first photoresist pattern. The first photoresist pattern is formed on an etched layer. A second photoresist(22) is coated on the result with the first photoresist pattern. The second photoresist is exposed on a region corresponding to the second photoresist pattern by using an exposure mask(23). The second photoresist pattern is formed by developing the exposed second photoresist.</p> |
