| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to reduce manufacturing costs by not using an expensive photo apparatus to open a specific part. CONSTITUTION: A plurality of trenches(37) are formed by etching a semiconductor substrate. A partially gap-filled sacrificial layer is formed in the trench to form a protrusion on the upper side of the semiconductor substrate. An etching barrier layer is formed on the front including the sacrificial layer by a slope deposition method. An etching barrier layer pattern(42A) is formed to expose the surface of the sacrificial layer to partially expose the etching barrier layer. One sidewall of the trench is open by etching the sacrificial layer using the etching barrier pattern as an etching barrier.</p> |
