Phase Change Memory Device Being Able to Improve Resistance of Word Line, Layout Structure of The Same, and Method of Manufacturing The Same,申请号KR20090058931-传众专利搜索

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发明名称	Phase Change Memory Device Being Able to Improve Resistance of Word Line, Layout Structure of The Same, and Method of Manufacturing The Same
摘要
申请公布号	KR101033468(B1)	申请公布日期	2011.05.09
申请号	KR20090058931	申请日期	2009.06.30
申请人		发明人
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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