| 摘要 |
PURPOSE: A method for manufacturing a silicon solar cell using an induced current device is provided to maximally increase a filling rate by reducing interface detects. CONSTITUTION: A second type silicon layer is formed on the upper side of a first type crystalline silicon substrate. A passivation layer or anti-reflection layer(130) is formed on the upper side of the second type silicon layer. A front metal electrode is formed on the upper side of the passivation layer or anti-reflection layer. A rear metal electrode(140) is formed on the lower side of the first type crystalline silicon substrate. A front metal electrode is selectively fired by using an induced current device. A passivation layer is formed between the first type crystalline silicon substrate and the second type silicon layer. |
