| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device using a hard mask layer laminated with an organic layer and an oxide layer is provided to prevent particles and device contamination by forming an extreme low temperature oxide layer whose thickness is controlled on the organic layer. CONSTITUTION: A structure with a gap-fill layer(26) is formed on a semiconductor substrate. The gap-fill layer is filled between a plurality of active regions and the surface of the gap-fill layer is recessed. An etched layer is formed on the structure. A carbon layer(29) is formed on the etched layer using a spin-on coating method. An oxide layer is formed on the carbon layer. An oxide film pattern is formed by etching the oxide layer using a photosensitive pattern(32) as a barrier. A carbon film pattern is formed by etching the carbon layer using the oxide film pattern as a barrier.</p> |
