| 摘要 |
PURPOSE: A method of manufacturing an EPI film in a substrate trench is provided to control the growth rate of a crystal plane by controlling process parameters such as temperature, pressure, etch gas flow, and deposition gas flow. CONSTITUTION: In a method of manufacturing an EPI film in a substrate trench, a semiconductor substrate is arranged(52). A trench is formed in a substrate(54). A semiconductor material is epitaxially grows(56). The bottom surface of the trench has a first crystal orientation The side surface of the trench has a second crystal plane orientation.
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