| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to easily form a storage node contact hole by using a first mask pattern and a second mask pattern of line type. CONSTITUTION: A plurality of first mask patterns(31) are extended in a first direction while the reserve area of a storage node contact plug is exposed. A plurality of second mask patterns(32) are extended in a second direction cross the first direction while the reserve area of the storage node contact plug is exposed. A storage node contact hole is formed by an etching process using the first and second mask patterns as an etching barrier. A storage node contact plug is formed by filling a conductive layer in the storage node contact hole.
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