| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a leak current flowing into a bit line from a signal line for outputting a taken-out signal to the outside can be suppressed. <P>SOLUTION: Specifically, an NMOS transistor 38 is connected to an NMOS transistor 34 in series, the source of a PMOS transistor 40 is connected to a power source, and a drain is connected to a node N between the NMOS transistor 34 and the NMOS transistor 38. Accordingly, when a data line signal "data" is pre-charged to an [H] level, in a bit line selecting circuit 23 to which a bit line selecting signal V of an [L] level being a non-selection signal is input, the node N is pre-charged to the [H] level, and since a potential difference between the source and the drain of the NMOS transistor 34 is no longer present, a leak current flowing into the bit line BL from the data line "data" through the node N is prevented. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
