METHOD OF FORMING COPPER LAYER ON SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide an electroplating method capable of keeping a sufficient quantity of production processing for printing. SOLUTION: The method of forming a copper layer on a wafer includes: a step of filling a via opening with copper using one or more low-powered positive-pulse cycles or AC cycles in a plating chamber, the via opening having a radius less than 1.0 micrometer and being filled to eliminate a gap; and a step of improving the throughput of the wafer by the plating chamber by using high-powered DC cycles in the plating chamber and completing the copper layer on the wafer. COPYRIGHT: (C)2011,JPO&INPIT