METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate for efficiently manufacturing a semiconductor device using SiC. SOLUTION: A first silicon carbide substrate 11 having a first back face B1 and a second silicon carbide substrate 12 having a second back face B2 are prepared. The first and second silicon carbide substrates 11 and 12 are disposed so that the first and second back faces B1 and B2 are respectively exposed in one direction. A growth layer 30 comprising silicon carbide and interconnecting the first and second back faces B1 and B2 is formed by a solution growth method. COPYRIGHT: (C)2011,JPO&INPIT