| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same which can prevent peeling and cracks of a passivation film. <P>SOLUTION: A semiconductor chip 1 is formed in a rectangular shape in plane view, and includes a groove 11 on a peripheral edge part of an outermost surface. The passivation film 2 is formed so as to cover an entire surface of the semiconductor chip 1 except for the groove 11. A stress relaxing layer 3, a rewiring 4, and a sealing resin layer 5 are formed on the passivation film 2. The sealing resin layer 5 covers up surfaces of the passivation film 2, the stress relaxing layer 3, and the rewiring 4, and in addition, wraps around a side surface from the surfaces of them to fill up the groove 11 of the semiconductor chip 1. <P>COPYRIGHT: (C)2011,JPO&INPIT |
