| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a silicon single crystal, by which a crystal free of grown-in defects is stably grown with good productivity, the crystal to be used as a mirror-polished wafer or an SOI wafer. SOLUTION: When a silicon single crystal is grown by a CZ method using a hot zone structure in which a temperature gradient Gc in the crystal center is equal to or greater than a temperature gradient Ge in the periphery of the crystal, the range of pulling rates at which grown-in defects can be prevented is broadened by supplying an inert gas containing hydrogen by 3 vol.% or more and 8 vol.% or less into a pulling furnace, compared to a process of using a gas containing no hydrogen, and the crystal is pulled in a vicinity of the critical rate at which a ring-shaped OSF (oxidation induced stacking fault) occurrence region vanishes in the crystal center. COPYRIGHT: (C)2011,JPO&INPIT |
