| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern formation method for performing highly precise treatment to a substrate to be treated. SOLUTION: A semiconductor is manufactured by using a template 1 formed with a pattern 11 for circuit pattern formation in a pattern formation region, and formed with a convex section 15 in a peripheral region. That is, liquid-shaped resin materials 31 are arranged on a substrate to be treated 30, and the template 1 is pressurized to resin materials 31, and a distance Xb between a lower face 15a of the convex section 15 and an upper face 30a of the substrate 30 to be treated is measured. A residual film thickness RLT of the resin materials 31 is calculated by subtracting a distance Xa from the distance Xb, and the movement of the template 1 is stopped when the thickness reaches a target value. Then, a resin pattern 33 is formed by hardening resin materials 31 in such a state that the template 1 is pressurized. Then, the template 1 is isolated from the resin pattern 33. Treatment is performed to the substrate 30 to be treated by using the resin pattern 33 as a mask. COPYRIGHT: (C)2011,JPO&INPIT
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