| 摘要 |
PROBLEM TO BE SOLVED: To realize a high-integrated non-volatile semiconductor memory device with low power consumption, in which a nonlinear element having sufficient current driving performance and insulation property is provided in a memory cell. SOLUTION: The non-volatile semiconductor memory device has a memory cell array in which a plurality of memory cells C are arranged in matrix in row and column directions, and in each of the memory cells C, a variable resistive element R and a nonlinear element S configured with an insulating body put between a first conductor and a second conductor are connected in series, and the nonlinear element is configured to satisfyϕ>0.5V<SB>SL</SB>/d+0.1 andϕ<V<SB>SL</SB>/d+0.1 when an absolute value of a rewriting voltage applied to a selective memory cell is V<SB>SL</SB>[V], and a film thickness of the insulating body is d [nm] and a height of a barrier of the nonlinear element isϕ[eV]. COPYRIGHT: (C)2011,JPO&INPIT |
