| 摘要 |
PURPOSE: Through Silicon Via technology processing method using a hybrid process is provided to form an excellent penetration electrode by eliminating residues on the surface of a semiconductor substrate. CONSTITUTION: Through Silicon Via technology processing method using a hybrid process is as follows. A photosensitive resin layer(30) is formed on a semiconductor substrate(10). Penetration electrodes(3) are formed on the semiconductor substrate, in which the photosensitive resin layer is formed, using an ultrashort pulse laser. The laser The penetration electrodes, formed by the ultrashort pulse laser, are cleaned using a deep reactive ion etching method. |
