| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor having favorable electric characteristics and high reliability, and a display device using the thin film transistor as a switching element. <P>SOLUTION: An In-Ga-Zn-O-based film is so formed as to have an incubation state exhibiting an electron beam diffraction pattern different from a conventionally known amorphous state that a halo shape pattern appears, and from a conventionally known crystal state that a spot appears clearly, and the film is used as a channel formation region of a channel etched thin film transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
