发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of inhibiting heat conduction to an area other than a substrate, when heating the substrate to the extent possible and improving the heat resistance required for each component, a device, or the like. SOLUTION: The substrate processing apparatus includes a heating portion 12 for heating the substrate 5; a substrate mount 11, made of a heat-transmitting material enclosing the heating portion; a substrate-processing chamber 9 for storing the substrate mount; a plasma-generating portion 14, provided around an outer periphery of the substrate-processing chamber; and a heat-transmitting dome 3, forming portion of the substrate-processing chamber and having a heat shield 21 between the heating portion and the plasma-generating portion. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011091389(A) 申请公布日期 2011.05.06
申请号 JP20100213455 申请日期 2010.09.24
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SATO TAKAYUKI
分类号 H01L21/31;C23C16/46 主分类号 H01L21/31
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