| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensor that facilitates manufacture, and that is quickly driven even though a multi-pixelation progresses. SOLUTION: The solid-state image sensor includes: a plurality of photodiodes 41 disposed in two dimentional array on the surface of a semiconductor substrate; a charge-transfer path 42 formed along the photodiode row comprising the photodiode 41; and a metal interconnection 53, constituting the charge-transfer path 42 and laid down over a transfer electrode film 51 comprising a polysilicon film, which applies a transfer pulse to the transfer electrode film 51. An opening of an arbitrary photodiode 41a out of the photodiodes is covered by a transfer electrode film 51c and a short circuit part 55 is provided to the transfer electrode film 51c on the opening to electrically connect the transfer electrode film 51 and the metal interconnection 53. COPYRIGHT: (C)2011,JPO&INPIT
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