发明名称 METHOD OF PROCESSING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of processing substrate which does not leave a stained portion on a final workpiece, even if ion-implanted portion remains therein. <P>SOLUTION: The method of processing the substrate where the substrate is processed by dividing the same in a depth direction includes the steps of injecting protons from a main surface of the substrate S11; and irradiating to the substrate a light, having a wavelength substantially equal to the absorption wavelength of the defect level formed in the substrate by the proton injection so as to divide the substrate S12. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011091264(A) 申请公布日期 2011.05.06
申请号 JP20090244603 申请日期 2009.10.23
申请人 JAPAN ATOMIC ENERGY AGENCY 发明人 ISHIYAMA SHINTARO
分类号 H01L21/304;H01L33/02 主分类号 H01L21/304
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