| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial silicon wafer, wherein a mirror plane-polishing process is simplified, productivity is increased to achieve cost reduction, and surface roughness of an epitaxial film is suppressed. SOLUTION: The epitaxial film is vapor-phase grown on a surface of a mirror plane silicon wafer before finish mirror plane polishing. Then a surface of the epitaxial film is etched with an HCl gas, so the mirror plane-polishing process is simplified, the productivity is improved to reduce the cost, and the surface roughness of the epitaxial film is suppressed. COPYRIGHT: (C)2011,JPO&INPIT |
