| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive element which uses a magnetization recording layer and a magnetization free layer both having vertical magnetic anisotropy and has a configuration that can obtain a high MR ratio at a high yield without increasing an element area. SOLUTION: The magnetic memory element comprises a magnetization recording layer 10 and a magnetic reading layer 50. The magnetization recording layer 10 is a ferromagnetic layer having vertical magnetic anisotropy, and stores information as a magnetization direction. The magnetic reading layer 50 has a magnetic tunnel junction which includes ferromagnetic layers having in-plane magnetic anisotropy. The magnetization recording layer 10 and the magnetic reading layer 50 are arranged in mutually nonparallel planes, respectively. COPYRIGHT: (C)2011,JPO&INPIT |
