| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems that a chalcogenide material is easily peeled off during a manufacturing process of a phase change memory because it has low adhesion properties with a silicon oxide film, and that it requires an extremely large rewriting current when the phase change memory is reset (becoming amorphous) because the chalcogenide material needs to be heated to its melting point or higher. SOLUTION: An interface layer which has both functions of an adhesive layer and a high resistance layer (thermal resistance layer) and comprises extremely thin insulator or a semiconductor is inserted between a chalcogenide material layer and an interlayer insulating film, and between the chalcogenide material layer and a plug. The insulator interface layer is formed by sputtering using a metal target to form a metal film, and then oxidizing the metal film under an oxidizing atmosphere such as oxygen radicals or oxygen plasma. COPYRIGHT: (C)2011,JPO&INPIT |
