| 摘要 |
PROBLEM TO BE SOLVED: To improve refresh characteristics by performing data rearrangement at a high speed. SOLUTION: In two memory blocks of memory blocks MB0-MBm, word lines are each driven to a selected state, and memory cell data is latched by a corresponding sense amplifier band. Then, data on a memory cell on one word line (sense amplifier) is read out to a global data line pair GIOP, and the read-out data is transferred to a rearrangement data line pair GRAP through a transfer circuit XFR. Subsequently, the data is transmitted to a memory cell on a selected word line in the other memory block through the rearrangement data line pair GRAP. In the data rearrangement, data is transferred internally to perform data rearrangement under the control of local control circuits LCTL0-LCTLm and a main control circuit MCTL. COPYRIGHT: (C)2011,JPO&INPIT
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