MATERIAL FOR DEPOSITING ELECTROCONDUCTIVE BARRIER FILM, METHOD FOR DEPOSITING ELECTROCONDUCTIVE BARRIER FILM AND METHOD FOR DEPOSITING WIRING FILM

摘要

PROBLEM TO BE SOLVED: To provide a material for depositing an electroconductive barrier film which can be deposited even when the electroconductive barrier film has 1/5-1/7 aspect ratio and≤10 nm thickness, and which has an excellent property of preventing copper diffusion (barrier properties), small electric resistance and excellent adhesiveness to a copper film. SOLUTION: The material for depositing the electroconductive barrier film is used for depositing an electroconductive Ta-Ti barrier film as an undercoat film of the copper film by a chemical vapor deposition method and includes a Ta-containing metal organic compound, a Ti-containing metal organic compound and a solvent for dissolving one or both of the Ta-containing metal organic compound and the Ti-containing metal organic compound. COPYRIGHT: (C)2011,JPO&INPIT