| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can improve crystallinity of a capacitor dielectric film that a ferroelectric capacitor has. SOLUTION: In the method of manufacturing the semiconductor device, a base conductive film 30 is formed on upper surfaces of an insulating film 20 and a conductive plug 25 formed on a semiconductor substrate 10 respectively and after the upper surface of the base conductive film 30 is polished to be flattened, a crystalline conductive film 31 is formed. On the crystalline conductive film 31, a lower electrode 33a, a capacitor dielectric film 34a made of a ferroelectric material and an upper electrode 35a are laminated thereafter in order to form the capacitor Q. COPYRIGHT: (C)2011,JPO&INPIT
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